NCS20091SQ3T2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCS20091SQ3T2G Power MOSFET:

NCS20091SQ3T2G

The NCS20091SQ3T2G delivers industry-leading RDS(on) density in ON Semiconductor's ultra-compact TDFN HV package. As a 90A N-channel MOSFET optimized for high power density applications with stringent cooling constraints, it maximizes heat dissipation in minimal footprint.

Key Features:

• 100V power rating
• 90A continuous drain current capability
• 12mΩ typical RDS(on)
• Tiny 3mm x 3mm TDFN HV package
• Excellent 6°C/W junction-to-case thermal resistance
• -55°C to 175°C operating temperature range
• Low internal gate charge for high frequency switching
• Ideal for solar inverters, industrial power supplies and variable speed drives

TDFN HV's integrated heat slug enables best-in-class thermal dissipation from ultra-small dimensions.

Combines top-tier current density with industry-leading cooling in minimal package size.

Ensures reliable operation even under demanding thermal environments.

Low gate charge fits more capability within strict thermal management requirements.

Simply enables the highest power density solution for applications with cooling challenges.

On Semiconductor's thermal optimization for designs requiring maximum capability with tight heat dissipation needs.

An ideal fit where board space is limited yet thermal demands from dense power are high.