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NCL30488B4DR2G onsemi

ZhongHao Industry Limited

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NCL30488B4DR2G onsemi

Country/Region china
City & Province shenzhen
Categories Electrical Ceramics
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Product Details

Here is the English description of the NCL30488B4DR2G chip:

  • Breakdown Voltage: 30V
  • On-Resistance: N/A (typ)
  • Continuous Drain Current: 4A
  • Fast Switching Speeds
  • TO-220 FullPak 2L Package

The NCL30488B4DR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 4A
  • Low RDS(on) minimizes conduction losses
  • Fast switching improves efficiency at high frequencies
  • TO-220 FullPak 2L package provides strong thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 4A loads
  • Motor drivers and controls under 4A load
  • General purpose switching under 4A load

Benefits include ability to switch up to 4A with low resistance and losses. The thermally robust package supports reliable continuous high current operation.

Well-suited for applications requiring precise switching of currents around 4A where heat dissipation is important.

In summary, the NCL30488B4DR2G offers 4A current handling capability with minimal resistance and losses, focusing on thermal management.

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