NCP711ASN500T1G onsemi

Here is the English description of the NCP711ASN500T1G chip:

• Breakdown Voltage: 50V
• On-Resistance: N/A (typ)
• Continuous Drain Current: 1.1A
• Fast Switching Speeds
• SOT-23 (DBV) Package

The NCP711ASN500T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 1.1A
• Low RDS(on) enables high conduction with minimal losses
• Fast switching improves efficiency at high frequencies
• Ultra-small SOT-23 (DBV) package saves precious board space

Common Applications:

• Point-of-load DC/DC converters below 1.1A loads
• Battery chargers under 1.1A load
• Higher voltage applications up to 50V

Benefits include the ability to precisely switch up to 1.1A at voltages up to 50V in a minimized footprint.

Well-suited for compact, higher voltage designs requiring current handling up to 1.1A.

In summary, the NCP711ASN500T1G combines 1.1A switching performance at 50V with an extremely small package.