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NCP1396BDR2G onsemi

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NCP1396BDR2G onsemi

Country/Region china
City & Province shenzhen
Categories Batteries
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Product Details

Here is the English description of the NCP1396BDR2G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 13.96A
  • On-Resistance: N/A (typ)
  • Fast Switching Speeds
  • TO-263 Package

The NCP1396BDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 13.96A
  • Low RDS(on) minimizes conduction losses
  • Fast switching speeds
  • TO-263 plastic package provides good thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 13.96A loads
  • Motor drives and controls under 13.96A load current
  • General purpose switching under 13.96A load

Benefits include the ability to precisely switch up to 13.96A with low losses. The plastic TO-263 package ensures reliable heat transfer.

Well-suited for applications requiring switching of currents up to 13.96A where thermal management is important.

In summary, the NCP1396BDR2G offers 13.96A switching capability with low resistance and losses in a thermally robust package.

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