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NCP730ASN330T1G onsemi

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NCP730ASN330T1G onsemi

Country/Region china
City & Province shenzhen
Categories Chargers
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Product Details

Here is the English description of the NCP730ASN330T1G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 7.3A
  • On-Resistance: 30 mΩ (typ)
  • Fast Switching Speeds
  • Power SO-8 Package

The NCP730ASN330T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 7.3A
  • Low RDS(on) of 30 mΩ minimizes conduction losses
  • Fast switching speeds for high efficiency
  • Power SO-8 package provides good thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 7.3A loads
  • Motor driver and control circuits under 7.3A current
  • General purpose switching under 7.3A loads

Benefits include reliability to switch up to 7.3A with industry-leading low resistance and losses.

Well-suited for applications requiring switching of currents up to 7.3A where minimizing conduction losses is important.

In summary, the NCP730ASN330T1G delivers 7.3A switching performance with ultra-low resistance in a thermally robust package.

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