NCP367DPMUEETBG onsemi

Here is the English description of the NCP367DPMUEETBG chip:

• Function: N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 3.67A
• On-Resistance: 10mΩ (typ)
• Fast Switching Speed
• PowerPAK 8-Lead Plastic Package

The NCP367DPMUEETBG is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching up to 3.67A
• Ultra-low RDS(on) of 10mΩ minimizes conduction losses
• Fast switching enables high efficiency operation
• PowerPAK TO-263 package provides ruggedness and thermal dissipation

Common Applications:

• Point-of-load DC/DC converters under 3.67A loads
• Motor driver circuits requiring up to 3.67A current
• General purpose switching below 3.67A

Benefits include reliable 3.67A switching capability with industry-leading low on-resistance. Proven PowerPAK package delivers ruggedness and optimized thermal performance.

Well suited for applications requiring precise control of currents up to 3.67A where conduction losses must be minimized.

In summary, the NCP367DPMUEETBG provides 3.67A switching with ultra-low losses using a robust through-hole package.