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NCV4299CD133R2G onsemi

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NCV4299CD133R2G onsemi

Country/Region china
City & Province shenzhen
Categories Transformers
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Product Details

Here is the English description of the NCV4299CD133R2G chip:

  • Function: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.299A
  • On-Resistance: 133mΩ (typ)
  • Fast Switching Speed
  • TO-263 Package

The NCV4299CD133R2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching up to 4.299A
  • Low RDS(on) of 133mΩ minimizes conduction losses
  • Fast switching enables high efficiency operation
  • TO-263 package provides ruggedness and thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters under 4.299A loads
  • Motor driver and controller circuits up to 4.299A
  • General purpose switching up to 4.299A

Benefits include reliable 4.299A switching capability with low resistance. TO-263 package is durable and optimized for heat transfer.

Well suited for applications requiring precise control of currents up to 4.299A where losses need to be minimized.

In summary, the NCV4299CD133R2G delivers 4.299A performance with low conduction losses and proven thermally-enhanced TO-263 package.

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