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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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4H High Purity Semi Insulating SiC Wafer , Research Grade , Epi Ready , 2”Size
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H High Purity Semi Insulating Silicon Carbide Wafer, Dummy Grade,Epi Ready,2”Size
| SUBSTRATE PROPERTY | S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430 |
| Description | Research Grade4H SEMI Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) | >1E5 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation | |
| On axis <0001>± 0.5° | |
| Off axis 3.5° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
Single crystal SiC Properties
Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.
Property of Silicon Carbide (SiC)
Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:
| Property | Value | Conditions |
| Density | 3217 kg/m^3 | hexagonal |
| Density | 3210 kg/m^3 | cubic |
| Density | 3200 kg/m^3 | Single crystal |
| Hardness,Knoop(KH) | 2960 kg/mm/mm | 100g,Ceramic,black |
| Hardness,Knoop(KH) | 2745 kg/mm/mm | 100g,Ceramic,green |
| Hardness,Knoop(KH) | 2480 kg/mm/mm | Single crystal. |
| Young's Modulus | 700 GPa | Single crystal. |
| Young's Modulus | 410.47 GPa | Ceramic,density=3120 kg/m/m/m, at room temperature |
| Young's Modulus | 401.38 GPa | Ceramic,density=3128 kg/m/m/m, at room temperature |
| Thermal conductivity | 350 W/m/K | Single crystal. |
| Yield strength | 21 GPa | Single crystal. |
| Heat capacity | 1.46 J/mol/K | Ceramic,at temp=1550 C. |
| Heat capacity | 1.38 J/mol/K | Ceramic,at temp=1350 C. |
| Heat capacity | 1.34 J/mol/K | Ceramic,at temp=1200 C. |
| Heat capacity | 1.25 J/mol/K | Ceramic,at temp=1000 C. |
| Heat capacity | 1.13 J/mol/K | Ceramic,at temp=700 C. |
| Heat capacity | 1.09 J/mol/K | Ceramic,at temp=540 C. |
| Electrical resistivity | 1 .. 1e+10 Ω*m | Ceramic,at temp=20 C |
| Compressive strength | 0.5655 .. 1.3793 GPa | Ceramic,at temp=25 C |
| Modulus of Rupture | 0.2897 GPa | Ceramic,with 1 wt% B addictive |
| Modulus of Rupture | 0.1862 GPa | Ceramifc,at room temperature |
| Poisson's Ratio | 0.183 .. 0.192 | Ceramic,at room temperature,density=3128 kg/m/m/m |
| Modulus of Rupture | 0.1724 GPa | Ceramic,at temp=1300 C |
| Modulus of Rupture | 0.1034 GPa | Ceramic,at temp=1800 C |
| Modulus of Rupture | 0.07586 GPa | Ceramic,at temp=1400 C |
| Tensile strength | 0.03448 .. 0.1379 GPa | Ceramic,at temp=25 C |
*Reference:CRC Materials Science and Engineering Handbook
Comparision of Property of single crystal SiC, 6H and 4H:
| Property | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
*Reference:Xiamen Powerway Advanced Material Co.,Ltd.
Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:
| Si-C Polytype | 3C-SiC | 4H-SiC | 6H-SiC |
| Crystal structure | Zinc blende (cubic) | Wurtzite ( Hexagonal) | Wurtzite ( Hexagonal) |
| Group of symmetry | T2d-F43m | C46v-P63mc | C46v-P63mc |
| Bulk modulus | 2.5 x 1012 dyn cm-2 | 2.2 x 1012 dyn cm-2 | 2.2 x 1012 dyn cm-2 |
| Linear thermal expansion coefficient | 2.77 (42) x 10-6 K-1 | ||
| Debye temperature | 1200 K | 1300 K | 1200 K |
| Melting point | 3103 (40) K | 3103 ± 40 K | 3103 ± 40 K |
| Density | 3.166 g cm-3 | 3.21 g cm-3 | 3.211 g cm-3 |
| Hardness | 9.2-9.3 | 9.2-9.3 | 9.2-9.3 |
| Surface microhardness | 2900-3100 kg mm-2 | 2900-3100 kg mm-2 | 2900-3100 kg mm-2 |
| Dielectric constant (static) | ε0 ~= 9.72 | The value of 6H-SiC dielectric constant is usually used | ε0,ort ~= 9.66 |
| Infrared refractive index | ~=2.55 | ~=2.55 (c axis) | ~=2.55 (c axis) |
| Refractive index n(λ) | n(λ)~= 2.55378 + 3.417 x 104·λ-2 | n0(λ)~= 2.5610 + 3.4 x 104·λ-2 | n0(λ)~= 2.55531 + 3.34 x 104·λ-2 |
| ne(λ)~= 2.6041 + 3.75 x 104·λ-2 | ne(λ)~= 2.5852 + 3.68 x 104·λ-2 | ||
| Radiative recombination coefficient | 1.5 x 10-12 cm3/s | 1.5 x 10-12 cm3/s | |
| Optical photon energy | 102.8 meV | 104.2 meV | 104.2 meV |
| Effective electron mass (longitudinal)ml | 0.68mo | 0.677(15)mo | 0.29mo |
| Effective electron mass (transverse)mt | 0.25mo | 0.247(11)mo | 0.42mo |
| Effective mass of density of states mcd | 0.72mo | 0.77mo | 2.34mo |
| Effective mass of the density of states in one valley of conduction band mc | 0.35mo | 0.37mo | 0.71mo |
| Effective mass of conductivity mcc | 0.32mo | 0.36mo | 0.57mo |
| Effective hall mass of density of state mv? | 0.6 mo | ~1.0 mo | ~1.0 mo |
| Lattice constant | a=4.3596 A | a = 3.0730 A | a = 3.0730 A |
| b = 10.053 | b = 10.053 |
* Reference: IOFFE
SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim
Introduction
Silicon carbide (SiC)-based semiconductor electronic devices and
circuits are presently being developed
for use in high-temperature, high-power, and high-radiation
conditions under which conventional semiconductors
cannot adequately perform. Silicon carbide’s ability to function
under such extreme conditions
is expected to enable significant improvements to a far-ranging
variety of applications and systems.
These range from greatly improved high-voltage switching for energy
savings in public electric power
distribution and electric motor drives to more powerful microwave
electronics for radar and communications
to sensors and controls for cleaner-burning more fuel-efficient jet
aircraft and automobile
engines. In the particular area of power devices, theoretical
appraisals have indicated that SiC
power MOSFET’s and diode rectifiers would operate over higher
voltage and temperature ranges, have
superior switching characteristics, and yet have die sizes nearly
20 times smaller than correspondingly
rated silicon-based devices. However, these tremendous theoretical
advantages have yet to be widely
realized in commercially available SiC devices, primarily owing to
the fact that SiC’s relatively immature
crystal growth and device fabrication technologies are not yet
sufficiently developed to the degree required
for reliable incorporation into most electronic systems.
This chapter briefly surveys the SiC semiconductor electronics
technology. In particular, the differences
(both good and bad) between SiC electronics technology and the
well-known silicon VLSI technology
are highlighted. Projected performance benefits of SiC electronics
are highlighted for several large-scale
applications. Key crystal growth and device-fabrication issues that
presently limit the performance and
capability of high-temperature and high-power SiC electronics are
identified.
