Home Companies XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

P Type , Indium Phosphide Wafer , 4”, Test Grade -InP Wafer Manufacturing

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Active Member

Contact Us

[China] country

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

Contact name:

Inquir Now

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

P Type , Indium Phosphide Wafer , 4”, Test Grade -InP Wafer Manufacturing

Country/Region china
City & Province xiamen fujian
Categories Other Metals & Metal Products
InquireNow

Product Details

P Type , Indium Phosphide Wafer , 4”, Test Grade -InP Wafer Manufacturing
 
PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties, InP wafer has higher electron mobility, higher frequency, low power consumption , higher thermal conductivity and low noise performance . PAM-XIAMEN can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .
 
Please contact our engineer team for more wafer information.
P Type, Indium Phosphide Wafer, 4”, Test Grade

4"InP Wafer Specification   
ItemSpecifications
Conduction TypeP-type
DopantZinc
Wafer Diameter4"
Wafer Orientation100±0.5°
Wafer Thickness600±25um
Primary Flat Length16±2mm
Secondary Flat Length8±1mm
Carrier Concentration≤3x1016cm-3(0.8-6)x1018cm-3(0.6-6)x1018cm-3N/A
Mobility(3.5-4)x103cm2/V.s(1.5-3.5)x103cm2/V.s50-70cm2/V.s>1000cm2/V.s
ResistivityN/AN/AN/A>0.5x107Ω.cm
EPD<1000cm-2<1x103cm-2<1x103cm-2<5x103cm-2
TTV<15um
BOW<15um
WARP<15um
Laser Markingupon request
Suface FinishP/E, P/P
Epi Readyyes
PackageSingle wafer container or cassette
 

Indium Phosphide Facts

  • Indium phosphide (InP) includes phosphorus and indium and is a binary semiconductor.
  • It has a zincblende crystal structure similar to GaAs and almost all the III-V semiconductors.
  • It has superior electron velocity due to which it is used in high-frequency and high-power electronics.
  • It has a direct bandgap, unlike many semiconductors.
  • Indium phosphide is also used as a substrate for optoelectronic devices.
  • Molecular weight: 145.792 g/mol
  • Melting point: 1062 °C (1943.6 °F)
  • It can be used for virtually any electronic device that requires high speed or high power.
  • It has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
  • InP is the most important material for the generation of laser signals and the detection and conversion of those signals back to electronic form.
Field dependences of the electron drift velocity in InP, 300 K.
Solid curve are theoretical calculation.
Dashed and dotted curve are measured data.
(Maloney and Frey [1977]) and (Gonzalez Sanchez et al. [1992]).
The field dependences of the electron drift velocity for high electric fields.
T(K): 1. 95; 2. 300; 3. 400.
(Windhorn et al. [1983]).
Field dependences of the electron drift velocity at different temperatures.
Curve 1 -77 K (Gonzalez Sanchez et al. [1992]).
Curve 2 - 300 K, Curve 3 - 500 K (Fawcett and Hill [1975]).
Electron temperature versus electric field for 77 K and 300 K.
(Maloney and Frey [1977])
Fraction of electrons in L and X valleys nL/no and nX/no as a function of electric field, 300 K.
(Borodovskii and Osadchii [1987]).
Frequency dependence of the efficiency η at first (solid line) and at the second (dashed line) harmonic in LSA mode.
Monte Carlo simulation.
F = Fo + F1·sin(2π·ft) + F2·[sin(4π·ft)+3π/2],
Fo=F1=35 kV cm-1,
F2=10.5 kV cm-1
(Borodovskii and Osadchii [1987]).
Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 300 K.
Ensemble Monte Carlo simulation.
(Aishima and Fukushima [1983]).
Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 77K.
Ensemble Monte Carlo simulation.
(Aishima and Fukushima [1983]).

Telecom/Datacom Application

Indium Phosphide (InP) is used to produce efficient lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.26 dB/km). InP is a commonly used material for the generation of laser signals and the detection and conversion of those signals back to electronic form. Wafer diameters range from 2-4 inches.
 
Applications are:
• Long-haul optical fibre connections over great distance up to 5000 km typically >10 Tbit/s
• Metro ring access networks
• Company networks and data center
• Fibre to the home
• Connections to wireless 3G, LTE and 5G base stations
• Free space satellite communication
 

Are You Looking for an InP substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InP wafers, send us enquiry today to learn more about how we can work with you to get you the InP wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

































Hot Products

N Type , GaAs (Gallium Arsenide) Wafer , 2”, Prime Grade , Epi Ready PAM-XIAMEN Develops and ...
GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED ,LD And Microelectronics Product Description ...
P Type , Indium Phosphide Wafer , 4”, Test Grade -InP Wafer Manufacturing PAM-XIAMEN provides single ...
P Type , High Purity Single Crystal Indium Phosphide Wafer , 4”, Prime Grade PAM-XIAMEN manufactures ...
P Type , InP( Indium Phosphide) Substrate , 3”, Dummy Grade PAM-XIAMEN provides single crystal InP...
P Type , InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade PAM-XIAMEN provides single ...