Results forgan epitaxial substrate un dopedfrom 56 Products.
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
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10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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5 x 10mm2 Free-standing GaN Substrates 350 ±25 µm From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate ...
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivit...
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5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a ...
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Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
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2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has excellent material characteristics for use ...
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms ...
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50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
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10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), ...
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10*10mm2 Si-Doped GaN / Sapphire Substrates For GaN Transistor PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN)...
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A Plane Si-Doped GaN Freestanding Hexagonal GaN Crystal Substrate PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer ...
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2 Inch Si-Doped GaN Epitaxial Materials On Sapphire For Gallium Nitride Devices PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum ...
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2 Inch Mg-Doped GaN Thin Films On Sapphire Substrates For GaN Power Device PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride ...
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4 Inch Mg-Doped GaN Material On C(0001) Sapphire Substrates PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum ...
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4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride ...
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