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VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth Gallium arsenide can ...
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2INCH dia50.8mm Ga doped Ge substrate 4inch N-type 500um Ge wafers Ge wafer for microelectronic application N type, Sb doped Ge wafer N type,undoped Ge wafer P type,Ga doped Ge ...
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VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the ...
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2inch/3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor ...
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VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, --------------------------------------------------...
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VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, --------------------------------------------------...
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2inch N-type single side polished Ge wafers Germanium substrate Ge window for infrared Co2 lasers Diameter:25.4mm Thickness:0.325mm Shanghai Famous Trade Co,.Ltd offers 2”, 3”, 4”, ...
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2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor Indium arsenide InAs Substrate Single Crystal Monocrystal Semiconductor substrate Single ...
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
Shanghai, china
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4inch N-type Ge wafers Germanium substrate Ge window for infrared Co2 lasers Ge Material Introduce Among optical materials, germanium materials are increasingly widely used in ...
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2inch 3inch 4inch InAs Wafer Crystal Substrates N-Type For MBE 99.9999% Monocrystalline Introduce of InAs substrate Indium InAs or indium mono-arsenide is a semiconductor composed ...
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4inch diameter 100mm Lithium niobate LiNbO3 substrate wafer, LN wafer for saw and optical,SAW Grade LiNbO3 Crystal ingot​ Description: Lithium niobate (LiNbO3) is a ferroelectric ...
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SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon ...
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2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown on InAs single ...
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2inch/3inch/4inch S/Fe/Zn doped InP Indium Phosphide Single Crystal Wafer Indium phosphide (InP) is an important compound semiconductor material with the advantages of high ...
Shanghai, china
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10x10mm or diameter 10mm dia25.4mm dia30mm, dia45mm, dia50.8mm AlN substrate AlN single crystal wafers Applications of AlN template Silicon-based semiconductor technology has ...
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2inch 4inch 4" 2'' Sapphire based GaN templates GaN film on the sapphire substrate GaN-On-Sapphire GaN wafers GaN substrates GaN windows Properties of GaN 1) At room temperature, ...
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Product Description: ZMSH — Innovative Manufacturer and Supplier of SiC Substrate Wafers As the leading manufacturer and supplier of SiC (Silicon Carbide) substrate wafer, ZMSH not ...
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8inch Dia200mm C-Plane Al2O3 99.999% Sapphire Single Crystal Wafer Carrier Substrate 1sp 2sp *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: ...
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