Results forga2o3 gallium nitride waferfrom 498 Products.
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4'' 200nm AlScN Template On Silicon SSP DSP Epitaxial Substrates for LED Devices Features: Aluminum scandium nitride (AlScN) on silicon refers to the deposition of a thin AlScN on ...
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2inch Blue-LED GaN on silicon wafer Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits several ...
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Product Description: Our InP (Indium Phosphide) semiconductor wafers, renowned for their exceptional electronic and optoelectronic properties, have found extensive applications in ...
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10x15mm 100 Orientation Gallium oxide GaO substrate 100 orientation with Fe doped 10x15mm Gallium oxide GaO substrate 100 orientation 10x10mm Gallium oxide substrate monocline ...
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2inch Green-LED GaN on silicon wafer Overview Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits ...
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Product Description: Our InP (Indium Phosphide) wafers are renowned for their low defect density and high performance, widely used in optoelectronics and microelectronics. These ...
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10x15mm 001 Gallium oxide GaO substrate Mg doping 10x10mm Gallium oxide substrate monocline structure ------------------------------------------------------------------------------...
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5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate ...
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AlN on Diamond template wafers AlN epitaxial films on Diamond substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon Welcome to Know AlN Template on Diamond~~ Advantages of AlN • ...
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates About GaN-on-GaN Feature Introduce ...
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FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates GaN on GaN In a GaN on GaN vertical ...
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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SD customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area Diamond has wide band gap, high thermal conductivity, high breakdown field strength, high ...
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Ra≤0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area GaN is widely used in radio frequency, fast charging and other fields, but its performance and ...
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JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal ...
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VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, 2inch N-Type Si-Doped un-doped GaAas Wafer Gallium Arsenide ...
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