Results fordsp sic epitaxial substratesfrom 543 Products.
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Abstract The 4-H Semi-Insulating SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal ...
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Diamond Slurry 500ml 5L Water Based Diamond Slurry For LED Substrate SiC Wafer Diamond slurry is widely used for polishing and lapping a variety of materials, such as LED substrate...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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C-axis (0001) orientation 12inch diameter 300mm with notch DSP Sapphire Substrate wafers thickness 1.5mm C-a 4inch dia100mm prime grade DSP/SSP 0.5mm thickness Al2O3 Sapphire ...
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Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' Thickness 350um Description of Indium Phosphide: Indium Phosphide (InP) chips are a widely used material in ...
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5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra...
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Al2O3 6 Inch Sapphire Window Substrates Wafer DSP Notch High Precision 8inch/6inch/5inch/ 2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane ...
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4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device 1. Comparison of third-generation semiconductor materials SiC crystal is a third-generation semiconducto...
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview Premium quality GaN crystal substrates with low ...
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High Purity Al2O3 99.999% Sapphire Substrate Wafer Carrier DSP SSP Product Description: Sapphire Substrate is a high-quality single-crystal substrate carrier made of Al2O3 material ...
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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2inch 50.8mm C Miscut A 4 Degree Sapphire Wafers Thickness 0.175mm/0.3mm/0.4mm/0.5mm Dsp 2 Inch C Plane Polished Sapphire Wafers Crystal Substrates The specifications of 2inch ...
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivit...
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6Inch Dia153mm 156mm 159mm Monocrystalline SiC Silicon Carbide Wafer Substrate Dummy Grade About Silicon Carbide (SiC)Crystal Silicon carbide substrate can be divided into ...
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5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applicatio...
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a-axis/m-plane/r-axis c-axis 2inch /3inch 4inch/ 5inch/6inch/8inch sapphire optical wafers, 0.1mm/100um 0.175/0.2mm/0.3mm/0.4mm/0.5mm 2inch sapphire c-axis dsp/ssp substrates zmkj ...
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C-axis (0001) orientation 8inch diameter 200mm with notch DSP Sapphire Substrate wafers thickness 1.15mm C-a Sapphire application Application Sapphire wafer and substrate ...
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Abstract The 4-H Semi-Insulating SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal ...
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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as...
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