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MRF151G RF N Channel Transistor Broadband Replacement For BLF278

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Shenzhen Koben Electronics Co., Ltd.

MRF151G RF N Channel Transistor Broadband Replacement For BLF278

Country/Region china
City & Province shenzhen guangdong
Categories Inverters & Converters
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Product Details

MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278

 

Features

1, Guaranteed Performance at 175 MHz, 50 V

2, Output Power — 300 W • Gain — 14 dB (16 dB Typ)

3, Efficiency — 50% • Low Thermal Resistance — 0.35°C/W

4,  Ruggedness Tested at Rated Output Power

5, Nitride Passivated Die for Enhanced Reliability

 

Description and Applications

 

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

 

 

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