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TPC8067-H,LQ(S) N-Channel 30 V 9A (Ta) 1W (Ta) Surface Mount 8-SOP
Specifications of TPC8067-H,LQ(S)
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVII-H |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | TPC8067 |
Features of TPC8067-H,LQ(S)
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: QSW = 1.9 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 26 mΩ (typ.) (VGS =
4.5 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
Applications of TPC8067-H,LQ(S)
• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Handsets
Environmental & Export Classifications of TPC8067-H,LQ(S)
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
