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TPH8R008NH,L1Q N-Channel 80 V 34A (Tc) 1.6W (Ta), 61W (Tc) Surface
Mount 8-SOP
Specifications of TPH8R008NH,L1Q
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 61W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | TPH8R008 |
Features of TPH8R008NH,L1Q
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: QSW = 13 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 6.6 mΩ (typ.) (VGS =
10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)
(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
Applications of TPH8R008NH,L1Q
• DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
Environmental & Export Classifications of TPH8R008NH,L1Q
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
