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[China]
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Address: Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Contact name:Amy
SZ ADE Electronics Co., Ltd |
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Verified Suppliers
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FDMC8200s Mosfet Array 30V 6A, 8.5A 700mW, 1W Surface Mount 8-Power33 (3x3)
Specifications of FDMC8200s
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Mfr | onsemi |
| Series | PowerTrench® |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 8.5A |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
| Power - Max | 700mW, 1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-Power33 (3x3) |
| Base Product Number | FDMC82 |
Features of FDMC8200s
• Q1: N−Channel
♦ Max rDS(on) = 20 m at VGS = 10 V, ID = 6 A
♦ Max rDS(on) = 32 m at VGS = 4.5 V, ID = 5 A
• Q2: N−Channel
♦ Max rDS(on) = 10 m at VGS = 10 V, ID = 8.5 A
♦ Max rDS(on) = 13.5 m at VGS = 4.5 V, ID = 7.2 A
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications of FDMC8200s
• Mobile Computing
• Mobile Internet Devices
• General Purpose Point of Load
Environmental & Export Classifications of FDMC8200s
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
