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[China]
Trade Verify
Address: Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Contact name:Amy
SZ ADE Electronics Co., Ltd |
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Verified Suppliers
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FDN335N N-Channel 20 V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Specifications of FDN335N
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | onsemi |
| Series | PowerTrench® |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 1.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | FDN335 |
Features of FDN335N
• 1.7 A, 20 V. R DS(ON) = 0.07 Ω @ V GS = 4.5 V RDS(ON) = 0.100 Ω @
V GS = 2.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely low R DS(ON)
• High power and current handling capability
Applications of FDN335N
• DC/DC converter
• Load switch
Environmental & Export Classifications of FDN335N
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
