Results for300mm wafer carriers semiconductorfrom 1446 Products.
|
|
8inch 4H-N type SiC Wafer thickness 500±25um n doped dummy prime research grade 8inch 4H-N type SiC Wafer's abstract This study presents the characterization of an 8-inch 4H-N type ...
|
|
|
|
|
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ ...
|
|
|
|
|
2-6 inch Gallium phosphide (GaP) crystals crystal substrate,GaP wafer ZMKJ can provides 2inch GaP wafer – gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) ...
|
|
|
|
|
4inch diameter 100mm Lithium niobate LiNbO3 substrate wafer, LN wafer for saw and optical,SAW Grade LiNbO3 Crystal ingot Description: Lithium niobate (LiNbO3) is a ferroelectric ...
|
|
|
|
|
2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/4inch 6inch silicon carbide SIC 4H-N seed crystal Wafer For crystal growth About Silicon Carbide (SiC)Crystal Silicon carbide ...
|
|
|
|
|
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as...
|
|
|
|
|
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ High purity un...
|
|
|
|
|
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single sic wafer 4Inch prime research dummy Grade 4H-N...
|
|
|
|
|
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single un-doped 4" 6" 6inch 4h-semi sic wafer 4Inch ...
|
|
|
|
|
Customzied size/60x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ ...
|
|
|
|
|
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ ...
|
|
|
|
|
SiO2 wafer Thermal Oxide Laver Thickness 20um+5% MEMS Optical Communication System Product Description: The SIO2 silicon dioxide wafer serves as a foundational element in ...
|
|
|
|
|
3inch 300um 500um sapphire wafers sapphire substrate C-plane for epitaxial growth Ultra-thin 2inch sapphire DSP wafers thickness 100um 0.1mm 2inch 100um Ultra Thin sapphire wafers ...
|
|
|
|
|
2inch 4inch AlN-on-Sapphire Epi-wafer 1-5um AlN template 8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application GaN Wafer Characteristic ...
|
|
|
|
|
Product Description: ZMSH is the leading manufacturer and supplier of SiC (Silicon Carbide) substrate wafers. Our wafers are optimal for electronic devices with high power and high ...
|
|
|
|
|
Product Description: As the leading manufacturer and supplier of SiC (Silicon Carbide) substrate wafer, ZMSH offers the best price on the market for 2 inch and 3 inch Research ...
|
|
|
|
|
2inch/3inch/4inch S/Fe/Zn doped InP Indium Phosphide Single Crystal Wafer Indium phosphide (InP) is an important compound semiconductor material with the advantages of high ...
|
|
|
|
|
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
|
|
|
|
|
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide ...
|
|
|
|
|
4inch N-type Ge wafers Germanium substrate Ge window for infrared Co2 lasers Ge Material Introduce Among optical materials, germanium materials are increasingly widely used in ...
|
|
|
You may also be interested in :
