Results fortransistor n channel mosfet 30vfrom 16833 Products.
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS ...
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STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A ■ ...
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SIC Integrated Circuit Chip SCT040W120G3AG Silicon Carbide HiP247 Wide Bandgap Transistors Product Description Of SCT040W120G3AG SCT040W120G3AG silicon carbide Power MOSFET device...
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SQ2361AEES Automotive P-Channel 60 V (D-S) 175 °C MOSFET SOT-23 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 ...
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
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AON6512 MOSFET Power Electronics Transistors FETs MOSFETs N-Channel 30V Surface Mount Package 8-DFN FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss...
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7 Inch 20 Transistor Outputs and 18 Inputs Programmable HMI PLC Model EX3G-70KH-38MT-16AD8DA-485P Display 7Inch Resolution 800*480pixels RAM 64MB ROM 128MB CPU ARM9 core 400MHz I/O ...
china
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IRFR7440TRPBF IC Electronic Components N channel transistor tube Product description rated over a −40°C to +105°C temperature Part number IRFR7440TRPBF is manufactured by INFINEON ...
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AOD417 D417 P-Channel 30V 25A 2.5W 50W Surface Mount TO-252 General Description The AOD417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ...
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IMZ120R090M1H N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-4-1 Features:IMZ120R090M1H Category Single FETs, MOSFETs Mfr Infineon Technologies Series CoolSiC Package ...
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Reliable And Rugged Field Effect Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand ...
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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A ...
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Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1 Automotive IGBT Modules Product Description Of DF17MR12W1M1HFB68BPSA1 DF17MR12W1M1HFB68BPSA1 is N-Channel Silicon Carbide ...
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
china
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AO4407A MOSFET Power Electronics P-Channel 30V 12A Transistors FETs MOSFETs Package 8-SOIC FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V ...
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AOD417 D417 P-Channel 30V 25A 2.5W 50W Surface Mount TO-252 General Description The AOD417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ...
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Reliable And Rugged Field Effect Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand ...
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2SK3564 Silicon N Channel MOS Type Switching Regulator Applications switching power mosfet Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) ...
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Integrated Circuit Chip IMZA65R039M1H Silicon Carbide TO-247-4 N-Channel Transistors Product Description Of IMZA65R039M1H IMZA65R039M1H is 650V CoolSiC M1 SiC Trench Power Device, ...
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2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) ►Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) ►High forward transfer admittance: |Yfs| = 0.4 ...
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