2SK3564 Silicon N Channel MOS Type Switching Regulator Applications switching power mosfet

2SK3564

Silicon N Channel MOS Type Switching Regulator Applications switching power mosfet

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.)

• High forward transfer admittance: |Yfs| = 2.6 S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 720 V)

• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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