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[China]
Trade Verify
Address: Building 36, Tianan Smart City, No. 228 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province
Contact name:Wang
WUXI LEO TECHNOLOGY CO.,LTD |
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Verified Suppliers
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Solid Power-DS-SPS600B17D3-S0405G0051 V-1.0
1700V 600A IGBT Half Bridge Module
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IGBT, Inverter / IGBT,逆变器
Maximum Rated Values / 最大额定值 | ||||||
|
Item |
Symbol |
Conditions |
Value |
Units | ||
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集电极－发射极电压 Collector-emitter voltage |
VCES |
Tvj=25°C |
1700 |
V | ||
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连续集电极直流电流 Continuous DC collector current |
IC nom |
TC=100°C, Tvjmax=175°C |
600 |
A | ||
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集电极重复峰值电流 Peak repetitive collector current |
ICRM |
tp=1ms |
1200 |
A | ||
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栅极－发射极峰值电压 Maximum gate-emitter voltage |
VGES |
±20 |
V | |||
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Characteristic Values / 特征值 | ||||||
|
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | ||
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集电极－发射极饱和电压 Collector-emitter saturation voltage |
VCE(sat) |
IC=600A,VGE=15V |
Tvj=25°C Tvj=125°C Tvj=150°C |
1.60 1.85 1.90 |
1.90 |
V V V |
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栅极阈值电压 Gate threshold voltage |
VGE(th) |
IC=18mA, VCE=VGE, Tvj=25°C |
5.0 5.8 6.5 |
V | ||
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栅极电荷 Gate charge |
QG |
VGE=-15V…+15V |
4.66 |
uC | ||
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内部栅极电阻 Internal gate resistor |
RGint |
Tvj=25°C |
1.7 |
Ω | ||
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输入电容 Input capacitance |
Cies |
f=1MHz, Tvj=25°C, VCE=25V, VGE=0V |
49.5 |
nF | ||
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反向传输电容 Reverse transfer capacitance |
Cres |
f=1MHz, Tvj=25°C, VCE=10V, VGE=0V |
0.75 |
nF | ||
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集电极-发射极截止电流 Collector-emitter cut-off current |
ICES |
VCE=1700V, VGE=0V, Tvj=25°C |
3.00 |
mA | ||
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栅极-发射极漏电流 Gate-emitter leakage current |
IGES |
VCE=0V, VGE=20V, Tvj=25°C |
600 |
nA | ||
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开通延迟时间(电感负载) Turn-on delay time, inductive load |
td( on) |
IC=600A, VCE=900V VGE=±15V RGon=1Ω RGoff=1Ω
Inductive Load, |
Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C |
145 170
175 |
ns ns ns | |
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上升时间(电感负载) Rise time, inductive load |
tr |
90 105
110 |
ns ns ns | |||
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关断延迟时间(电感负载) Turn-off delay time, inductive load |
td(off) |
590 700
720 |
ns ns ns | |||
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下降时间(电感负载) Fall time, inductive load |
tf |
370 600
650 |
ns ns ns | |||
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开通损耗能量(每脉冲) Turn-on energy loss per pulse |
Eon |
79.6 135.1 153.6 |
mJ mJ mJ | |||
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关断损耗能量(每脉冲) Turn-off energy loss per pulse |
Eoff |
144.3 201.7 212.5 |
mJ mJ mJ | |||
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短路数据 SC data |
ISC |
VGE≤15V, VCC=1000V VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C |
1900 |
A | ||
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结－外壳热阻 Thermal resistance, junction to case |
RthJC |
Per IGBT / 每个 IGBT |
0.05 |
K/W | ||
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工作温度 Temperature under switching conditions |
Tvjop |
-40 150 |
°C | |||
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Diode, Inverter / 二极管,逆变器 Maximum Rated Values /最大额定值 | ||||||
|
Item |
Symbol |
Conditions |
Value |
Units | ||
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反向重复峰值电压 Peak repetitive reverse voltage |
VRRM |
Tvj=25°C |
1700 |
V | ||
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连续正向直流电流 Continuous DC forward current |
IF |
600 |
A | |||
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正向重复峰值电流 Peak repetitive forward current |
IFRM |
tp=1ms |
1200 |
A | ||
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Characteristic Values / 特征值 | ||||||
|
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | ||
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正向电压 Forward voltage |
VF |
IF=600A |
Tvj=25°C Tvj=125°C Tvj=150°C |
2.20 2.40 2.40 |
2.50 |
V V V |
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反向恢复峰值电流
Peak reverse recovery current |
IRM |
IF=600A -diF/dtoff=7000A/µs VR =900 V
VGE=-15V |
Tvj=25°C 800 Tvj=125°C 920
Tvj=150°C 950 |
A A A | ||
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恢复电荷 Recovery charge |
Qr |
Tvj=25°C 153 Tvj=125°C 237
Tvj=150°C 260 |
uC uC uC | |||
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反向恢复损耗(每脉冲) Reverse recovery energy (per pulse) |
Erec |
Tvj=25°C Tvj=125°C Tvj=150°C |
79.5 153.3 166.7 |
mJ mJ mJ | ||
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结－外壳热阻 Thermal resistance, junction to case |
RthJC |
Per diode / 每个二极管 |
0.09 |
K/W | ||
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工作温度 Temperature under switching conditions |
Tvjop |
-40 150 |
°C | |||
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NTC-Thermistor / 负温度系数热敏电阻 Characteristic Values /特征值 | ||||||
|
Item |
Symbol |
Conditions |
Value |
Units | ||
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额定电阻值 Rated resistance |
R25 |
TC=25°C |
5.00 |
kΩ | ||
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B-值 B-value |
B25/50 |
3375 |
K | |||
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Module / 模块 | ||||
|
Item |
Symbol |
Conditions |
Value |
Units |
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绝缘测试电压 Isolation test voltage |
VISOL |
RMS, f=50Hz, t=1min |
3.4 |
kV |
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模块基板材料 Material of module baseplate |
Cu | |||
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内部绝缘 Internal isolation |
基本绝缘 (class 1, IEC 61140) Basic insulation (class 1, IEC 61140) |
Al2O3 | ||
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爬电距离 Creepage distance |
端子-散热片 / terminal to heatsink 端子-端子/terminal to terminal |
14.5 13.0 |
mm | |
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电气间隙 Clearance |
端子-散热片 / terminal to heatsink 端子-端子/terminal to terminal |
12.5 10.0 |
mm | |
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相对电痕指数 Comparative tracking index |
CTI |
> 200 | ||
|
Item |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Units |
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杂散电感,模块 Stray inductance module |
LsCE |
20 |
nH | |||
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模块引线电阻,端子-芯片 Module lead resistance, terminals - chip |
RCC’+EE’ |
TC=25°C |
1.10 |
mΩ | ||
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储存温度
Storage temperature |
Tstg |
-40 |
125 |
°C | ||
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模块安装的安装扭矩 Mounting torque for module mounting |
M5 |
3.00 |
6.00 |
Nm | ||
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端子联接扭矩 Terminal connection torque |
M6 |
3.00 |
6.00 |
Nm | ||
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重量
Weight |
G |
345 |
g |
