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1600V 180A 3-Phase Half Controlled + IGBT Braking Chopper Module-SPS180RC16K2

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1600V 180A 3-Phase Half Controlled + IGBT Braking Chopper Module-SPS180RC16K2

Country/Region	china
City & Province	wuxi jiangsu
Categories	Inverters & Converters

Product Details

Solid Power-DS-SPS180RC16K2-S04040007 V1.0

1600V 180A 3-Phase Half Controlled + IGBT Braking Chopper Module

Features:

Low Thermal Resistance Al2O3 Substrate
High Power Density
Compact design

Typical Applications:

Active Rectifier
Half Controlled B6-bridge

Diode , Rectifier /

Maximum Rated Value /

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C, IR=0.1mA

1600

最大正向均方根电流(每芯片)

Maximum RMS forward current per chip

IFRMSM

TC=80°C, Tvj=150°C

150

最大整流器输出均方根电流

Maximum RMS current at rectifier output

IRMSM

TC=80°C

180

正向浪涌电流

Surge forward current

IFSM

tp=10ms, Tvj=25°C

1300

I2t-值

I²t-value

I2t

tp=10ms, Tvj=25°C

8450

A2s

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

Tvj=25°C, IF=110A

1.05 1.20

阈值电压

Threshold voltage

VTO

Tvj=150°C

0.80

斜率电阻

Slope resistance

Tvj=150°C

2.40

mΩ

反向电流

Reverse current

Tvj=150°C, VR=1600V

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.28

K/W

Thyristor-rectifier / 晶闸管,整流器

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1600

最大正向均方根电流(每芯片)

Maximum RMS forward current per chip

IFRMSM

TC=80°C

150

最大整流器输出均方根电流

Maximum RMS current at rectifier output

IRMSM

TC=80°C

180

正向浪涌电流

Surge forward current

IFSM

tp=10ms, Tvj=25°C

tp=10ms, Tvj=130°C

1800

1450

I²t -值

I²t-value

I2t

tp=10ms, Tvj=25°C

tp=10ms, Tvj=130°C

16200

10510

A2s

通态电流临界上升率

Critical rate of rise of on-state current

(di/dt) cr

Tvj = 130°C

100

A/µs

通态电压临界上升率

Critical rate of rise of on-state voltage

(di/dt) cr

Tvj = 130°C, VD=2/3VDRM

1000

V/µs

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VTM

Tvj = 130 °C, IT = 110 A

1.30

阈值电压

Threshold voltage

V(TO)

Tvj=130°C

0.90

斜率电阻

Slope resistance

Tvj=130°C

3.20

mΩ

门极触发电流

Gate trigger current

IGT

Tvj=25°C, VD=12V, RL=30Ω

100

门极触发电压

Gate trigger voltage

VGT

Tvj=25°C, VD=6V

2.00

门极不触发电流

Gate non-trigger current

IGD

Tvj=130°C, VD=6V

Tvj=130°C, VD=0.5 VDRM

6.0

3.0

门极不触发电压

Gate non-trigger voltage

VGD

Tvj=130°C, VD=VDRM

0.25

维持电流

Holding current

Tvj=25°C, IT=1A

250

擎住电流

Latching current

Tvj=25°C, IG=1.2IGT

300

门极控制延迟时间

Gate controlled delay time

tgd

DIN IEC 747-6

Tvj=25°C, iGM=0.6A, diG/dt=0.6A/µs

1.2

µs

换流关断时间

Circuit commutated turn-off time

Tvj = 130°C, iTM = 50 A

VRM = 100 V, VDM = 2/3 VDRM

dVD/dt = 20 V/µs, -diT/dt = 10 A/µs

150

µs

反向电流

Reverse current

Tvj=125°C, VR=1600V

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per Thyristor / 每个晶闸管

0.24

K/W

IGBT Brake-Chopper / IGBT 制动-斩波器

Maximum Rated Values / 最大额定值

连续集电极直流电流 IC nom TC=80°C, Tvj=175°C 100 A

Continuous DC collector current IC TC=25°C, Tvj=175°C 140 A

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on) Tvj=25°C 125 µs

上升时间(电感负载)

Rise time, inductive load

Tvj=25°C

µs

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

IC=100A, VCE=600V

VGE=±15V

Tvj=25°C

300

µs

下降时间(电感负载)

Fall time, inductive load

RGon=1.5 Ω

RGoff=1.5 Ω

Tvj=25°C

165

µs

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

Tvj=25°C

2.4

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

Tvj=25°C

7.5

K/W

短路数据

SC data

ISC

VGE≤15V, VCC=800V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C

360

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.25

Diode, Brake-Chopper /

Maximum Rated Values /

反向恢复峰值电流

Peak reverse recovery current

IRM Tvj=150°C 50 A

反向恢复时间

Reverse recovery time

Trr

IF=50A

diF/dtoff=1300A/µs

Tvj=150°C

380

恢复电荷

Reverse recovery charge

VR = 600 V

VGE=-15V

Tvj=150°C

µC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Erec

Tvj=150°C

3.5

0.70 K/W

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

Item

Symbol

Conditions

Value

Units

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

2.5

模块基板材料

Material of module baseplate

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

10.0

电气间隙

Clearance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

7.5

相对电痕指数

Comperative tracking index

CTI

> 200

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

最大结温

Maximum junction temperature

Tvj(max)

逆变器, 制动-斩波器 /inverter, brake-chopper 整流器/rectifier

175

125

°C

在开关状态下温度

Temperature under switching conditions

Tvj(op)

逆变器, 制动-斩波器 /inverter, brake-chopper 整流器/rectifier

-40

150

125

°C

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭距

Mounting torque for module mounting

3.00

6.00

重量

Weight

180

IGBT

Output characteristic IGBT, Brake-Chopper(typical) IC=f(VCE) Forward characteristic of Diode, Brake-Chopper(typical)

VGE=15V IF=f(VF)

Forward characteristic of Diode, Rectifier (typical)

IF=f(VF)

"1600V 180A + IGBT" likely refers to an IGBT (Insulated Gate Bipolar Transistor) device with a voltage rating of 1600 volts and a current rating of 180 amperes. Here's an explanation of this description:

1. Voltage Rating (1600V): This indicates the maximum voltage the IGBT can withstand, and a rating of 1600 volts suggests that the device is suitable for applications requiring handling higher voltage levels, such as high-voltage inverters or other high-voltage power supply applications.

2. Current Rating (180A): This represents the maximum current the IGBT can handle, and a rating of 180 amperes specifies the level of current the device is capable of conducting. This is relevant for applications requiring the handling of high-power levels.

3. IGBT: Insulated Gate Bipolar Transistor is a semiconductor device commonly used in power electronics applications, such as inverters, motor drives, and power supplies, for switching and amplifying electrical signals.

Such a device might be used in high-power and high-voltage applications where precise control of both current and voltage is necessary. When using this device, careful consideration of appropriate thermal management measures and gate drive circuitry is essential to ensure its reliability and performance. Specific technical specifications and application guidelines can be found in the manufacturer's datasheet.

Circuit diagram headline