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Solid Power-DS-SPS240RC16K3-S04030012 V1.0
1600V 240A 3-Phase Half Controlled + IGBT Braking Chopper Module
1600V 240A + IGBT
General Description
Features:
Typical Applications:
Item |
Symbol |
Conditions |
Value |
Units | |
反向重复峰值电压 Peak repetitive reverse voltage |
VRRM |
Tvj=25°C, IR=0.1mA |
1600 |
V | |
最大正向均方根电流(每芯片) Maximum RMS forward current per chip |
IFRMSM |
TC=80°C, Tvj=150°C |
170 |
A | |
最大整流器输出均方根电流 Maximum RMS current at rectifier output |
IRMSM |
TC=80°C |
240 |
A | |
正向浪涌电流 Surge forward current |
IFSM |
tp=10ms, Tvj=25°C tp=10ms, Tvj=150°C |
1440
1200 |
A A | |
I2t-值 I²t-value |
I2t |
tp=10ms, Tvj=25°C tp=10ms, Tvj=150°C |
10368
7200 |
A2s | |
Characteristic Values | |||||
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | |
正向电压 Forward voltage |
VF |
Tvj=25°C, IF=170A Tvj=150°C, IF=170A |
1.10 1.00 |
1.30 |
V V |
阈值电压 Threshold voltage |
VTO |
Tvj=150°C |
0.79 |
V | |
斜率电阻 Slope resistance |
rT |
Tvj=150°C |
1.4 |
mΩ | |
反向电流
Reverse current |
IR |
Tvj=150°C, VR=1600V |
2 |
mA | |
结-外壳热阻 Thermal resistance, junction to case |
RthJC |
Per diode / 每个二极管 |
0.25 |
K/W |
Item |
Symbol |
Conditions |
Value |
Units |
反向重复峰值电压 Peak repetitive reverse voltage |
VRRM |
Tvj=25°C |
1600 |
V |
最大正向均方根电流(每芯片) Maximum RMS forward current per chip |
IFRMSM |
TC=80°C |
165 |
A |
最大整流器输出均方根电流 Maximum RMS current at rectifier output |
IRMSM |
TC=80°C |
240 |
A |
正向浪涌电流 Surge forward current |
IFSM |
tp=10ms, Tvj=25°C |
2250 |
A |
I²t -值 I²t-value |
I2t |
tp=10ms, Tvj=25°C |
25000 |
A2s |
通态电流临界上升率 Critical rate of rise of on-state current |
(di/dt) cr |
Tvj = 25°C |
150 |
A/µs |
通态电压临界上升率 Critical rate of rise of on-state voltage |
(dv/dt) cr |
Tvj = 130°C, VD=2/3VDRM |
1500 |
V/µs |
Characteristic Values | ||||
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units |
正向电压 Forward voltage |
VTM |
Tvj = 130 °C, IT = 165 A |
1.20 |
V |
阈值电压 Threshold voltage |
V(TO) |
Tvj=130°C |
0.85 |
V |
斜率电阻 Slope resistance |
rT |
Tvj=130°C |
2.20 |
mΩ |
门极触发电流 Gate trigger current |
IGT |
Tvj=25°C, VD=12V, RL=33Ω |
80 |
mA |
门极触发电压 Gate trigger voltage |
VGT |
Tvj=25°C, VD=12V, RL=33Ω |
1.50 |
V |
门极不触发电流 Gate non-trigger current |
IGD |
Tvj=130°C, VD=6V
Tvj=130°C, VD=0.5 VDRM |
6.0 3.0 |
mA |
门极不触发电压 Gate non-trigger voltage |
VGD |
Tvj=130°C, VD=VDRM |
0.2 |
V |
维持电流
Holding current |
IH |
Tvj=25°C, IT=1A |
160 |
mA |
擎住电流
Latching current |
IL |
Tvj=25°C, IG=1.2IGT |
250 |
mA |
门极控制延迟时间 Gate controlled delay time |
tgd |
DIN IEC 747-6 Tvj=25°C, iGM=0.6A, diG/dt=0.6A/µs |
1.2 |
µs |
换流关断时间 Circuit commutated turn-off time |
tq |
Tvj = 130°C, iTM = 50 A VRM = 100 V, VDM = 2/3 VDRM dVD/dt = 20 V/µs, -diT/dt = 10 A/µs |
150 |
µs |
反向电流
Reverse current |
IR ID |
Tvj=125°C, VR=1600V |
20 |
mA |
结-外壳热阻 Thermal resistance, junction to case |
RthJC |
Per Thyristor / 每个晶闸管 |
0.19 |
K/W |
IGBT
Output characteristic IGBT, Brake-Chopper(typical) Forward characteristic of Diode, Brake-Chopper(typical)
IC=f(VCE) IF=f(VF)
VGE=15V
Forward characteristic of Diode, Rectifier (typical)
IF=f(VF)
This is a 3-phase half-controlled + IGBT braking chopper module with a 1600V voltage rating and a 240A current rating. It is likely used in motor drives for applications requiring precise control of motor speed and dynamic braking capabilities. Proper heat dissipation, cooling, and protective measures are essential for safe and reliable operation in high-power applications.
Circuit diagram headline
Package outlines