Results forsingle crystal sapphire crystalfrom 17929 Products.
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5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a ...
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Dia 100 mm 4 inch Sapphire Substrate Wafer Single Side Polished Specification Orientation (22-43)Plane offcut 0.45° away from C plane-per sketch 22-43 Diameter 100mm ± 0.2mm ...
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Molybdenum Nuts Screw High Temperature Furnace Single Crystal Furnace Heating Parts 1.Description Of Molybdenum Nuts Screws: Molybdenum nut is a special nut made of molybdenum ...
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10*10mm2*0.3mm electronic grade single crystal diamond,N content<100ppb, XRD<0.015º Thermal conductivity 1000-2200 for heat sink Overview Single-crystal diamond wafers enable ...
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Dia 100 mm 4 inch Sapphire Substrate Wafer Single Side Polished Specification Orientation (22-43)Plane offcut 0.45° away from C plane-per sketch 22-43 Diameter 100mm ± 0.2mm ...
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225nm to far infrared Electronic Grade Single Crystal Diamond N Content<100ppb 3*3mm²*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º For Heat Sink ...
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3*3mm²*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º For Heat Sink Overview After nearly 4 decades of stop-start research into CVD diamond growth, ...
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3*3mm²*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º For Heat Sink Overview Remarkable progress in CVD methods of diamond synthesis has made it ...
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XRD<0.015º Electronic Grade Single Crystal Diamond For Heat Sink 3*3mm²*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º For Heat Sink Overview Grade and ...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Resistance<9E18Ω/cm-3 Optoelectron...
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10x10mm2 100(off 6°) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤5nm Optoelectronic devices, ...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectron...
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10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectr...
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JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90°Cw.From Primary Flat±5° SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost ...
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview The features are high crystalline, good uniformity, ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra...
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