Results forsilicone breathing circuit anesthesia machinefrom 26459 Products.
|
|
Silicon Carbide MOSFET Transistors IMW120R140M1H N-Channel 1200V 19A 94W Through Hole Product Description Of IMW120R140M1H IMW120R140M1H is CoolSiC™ 1200 V, 140 mΩ SiC MOSFET in ...
china
|
|
|
|
|
High Power Silicon Carbide Power Discrete Devices with Extremely Low Reverse Recovery Current *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: ...
|
|
|
|
|
1200V 87A IDWD30G120C5XKSA1 Schottky Silicon Carbide Diodes TO-247-2 Package Product Description Of IDWD30G120C5XKSA1 IDWD30G120C5XKSA1 Gen 5 1200V CoolSiC Schottky Diodes offer ...
china
|
|
|
|
|
High Temperature Resistance Silicon Carbide Schottky Diode for PFC Circuit Based on National Military Standard Production *, *::before, *::after {box-sizing: border-box; } * ...
|
|
|
|
|
N-Channel 1200 V 103A MSC025SMA120B4 MOSFETs Silicon Carbide Transistors Product Description Of MSC025SMA120B4 MSC025SMA120B4 device is a 1200 V, 25 mΩ SiC MOSFET in a TO-247 4...
china
|
|
|
|
|
High Power Silicon Carbide Device for Motor Driver Application *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; ...
|
|
|
|
|
Transistors MSC360SMA120B Silicon Carbide N-Channel Power MOSFET TO-247-4 Product Description Of MSC360SMA120B MSC360SMA120B is Silicon Carbide N-Channel Power MOSFET in a TO-247 ...
china
|
|
|
|
|
1200V Silicon Carbide MSC017SMA120J N-Channel Power MOSFET Module SOT-227-4 Product Description Of MSC017SMA120J MSC017SMA120J is Silicon Carbide N-Channel Power MOSFET, 1200V, ...
china
|
|
|
|
|
1200V MSC080SMA120J Silicon Carbide N-Channel Power MOSFET Chassis Mount SOT-227 Product Description Of MSC080SMA120J The MSC080SMA120J device is a 1200 V, 80 mΩ SiC MOSFET in an ...
china
|
|
|
|
|
650V Transistors IMBG65R083M1HXTMA1 Silicon Carbide MOSFET Single Tube TO-263-8 Product Description Of IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 is Silicon Carbide MOSFET Single Tube, ...
china
|
|
|
|
|
IMBF170R450M1XTMA1 1700V Trench Type Silicon Carbide MOSFET Transistors TO-263-8 Product Description Of IMBF170R450M1XTMA1 IMBF170R450M1XTMA1 is 1700V CoolSiC™ Trench-type Silicon ...
china
|
|
|
|
|
IC Chip NTH4L020N090SC1 484W MOSFET Silicon Carbide N-Channel Transistors Product Description Of NTH4L020N090SC1 NTH4L020N090SC1 is 1700V EliteSiC MOSFET provides reliable, high...
china
|
|
|
|
|
NTH4L015N065SC1 N-Channel 650V 142A MOSFET Silicon Carbide Transistors Product Description Of NTH4L015N065SC1 NTH4L015N065SC1 is Silicon Carbide (SiC) MOSFET – EliteSiC,12mohm, 650 ...
china
|
|
|
|
|
N-Channel NTH4L040N120SC1 Silicon Carbide Power MOSFET Transistors TO-247-4L Product Description Of NTH4L040N120SC1 NTH4L040N120SC1 is 1200V 58A(Tc) 319W (Tc) N-Channel Silicon ...
china
|
|
|
|
|
SCTW90N65G2V N-Channel 650V 90A 390W Silicon carbide Power MOSFET Transistors Product Description Of SCTW90N65G2V SCTW90N65G2V is Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ ...
china
|
|
|
|
|
Silicon Carbide MOS Transistors TW107N65C,S1F N-Channel TO-247-3 650V IC Chips Product Description Of TW107N65C,S1F TW107N65C,S1F is N-Channel 650V 20A(Tc) 76W (Tc), Silicon ...
china
|
|
|
|
|
Transistors SCTW100N65G2AG Automotive-Grade Silicon Carbide MOSFET 650V 100A 20mOhm Product Description Of SCTW100N65G2AG SCTW100N65G2AG Automotive-grade silicon carbide Power ...
china
|
|
|
|
|
8-PowerVDFN SCTL90N65G2V MOSFET Silicon Carbide Power MOSFET 650V 18mOhm Typ 40 A Product Description Of SCTL90N65G2V SCTL90N65G2V Silicon carbide Power MOSFET 650 V, 18 mΩ typ., ...
china
|
|
|
|
|
IC Chip SCTL35N65G2V 650V 40A Silicon carbide Power MOSFET Transistors Product Description Of SCTL35N65G2V SCTL35N65G2V device reduces internal capacitances and gate charges for ...
china
|
|
|
|
|
SCTWA30N120 Silicon Carbide N-Channel Transistors TO-247-3 Through Hole Product Description Of SCTWA30N120 SCTWA30N120 silicon carbide Power MOSFET is produced exploiting the ...
china
|
|
|
