ShenZhen Mingjiada Electronics Co.,Ltd. |
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Silicon Carbide MOSFET Transistors IMW120R140M1H N-Channel 1200V 19A 94W Through Hole
Product Description Of IMW120R140M1H
IMW120R140M1H is CoolSiC™ 1200 V, 140 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability.
Specification Of IMW120R140M1H
Part Number | IMW120R140M1H |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Features Of IMW120R140M1H
Highest efficiency
Reduced cooling effort
Higher frequency operation
Increased power density
Reduced system complexity
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our
purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample
free?
A: Yes,we support sample order and small order.Sample cost is
different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also
use your suggested forwarder.Products will be in good packing and
ensure the safety and we are responsible to product damage to your
order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without
stock,we will confirm lead time for you based on your order
quantity.