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Silicon Carbide MOSFET Transistors IMW120R140M1H N-Channel 1200V 19A 94W Through Hole

ShenZhen Mingjiada Electronics Co.,Ltd.

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Silicon Carbide MOSFET Transistors IMW120R140M1H N-Channel 1200V 19A 94W Through Hole

Country/Region china
City & Province shenzhen
Categories Inverters & Converters
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Product Details

Silicon Carbide MOSFET Transistors IMW120R140M1H N-Channel 1200V 19A 94W Through Hole

 

Product Description Of IMW120R140M1H

IMW120R140M1H is CoolSiC™ 1200 V, 140 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability.

 

Specification Of IMW120R140M1H

Part Number

IMW120R140M1H

Product Status

Active

FET Type

N-Channel

Technology

 SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)


Features Of IMW120R140M1H

  • Highest efficiency

  • Reduced cooling effort

  • Higher frequency operation

  • Increased power density

  • Reduced system complexity

 

Other Supply Product Types

Part Number

Package

MSCSM120TAM16CTPAG

Module

MSCSM120AM11CT3AG

Module

MSCSM120AM50CT1AG

Module

MSCSM70AM025CD3AG

Module

MSCSM70AM025CT6LIAG

Module

MSCSM70AM10CT3AG

Module

 

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

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