IRFH5210TRPBF MOSFET Power Electronics - High Performance and Durability

Product: IRFH5210TRPBF MOSFET

Description: This MOSFET is a high-voltage N-channel MOSFET featuring low RDS(on), fast switching, and low gate charge. It is designed to withstand high voltage, high current, and high temperature applications.

Parameters:

- Drain-Source Voltage (VDS): 100V

- Drain Current (ID): 110A

- RDS(on): 0.0075 Ohm

- Gate-Source Voltage (VGS): ±20V

- Total Gate Charge (Qg): 17nC

- Input Capacitance (Ciss): 7400pF@VDS=25V

- Operating Temperature: -55°C to 150°C

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