IRFH5302TRPBF MOSFET Power Electronics High Performance, Low On-Resistance, Low Gate Charge

Product Listing:

IRFH5302TRPBF N-Channel Power MOSFET

Parameters:

•Voltage: 55V
•RDS(on): 0.13 Ohm
•ID: 17A
•Package: TO-252
•Configuration: Single
•Mounting Type: Through Hole
•Drain to Source Voltage (Vdss): 55V
•Gate to Source Voltage (Vgs): 20V
•Current - Continuous Drain (Id) @ 25°C: 17A
•Power - Max: 1.2W
•Operating Temperature: -55°C ~ 150°C
•Rise Time: 12nS
•Fall Time: 10nS
•Toggle Frequency: 100kHz
•Input Capacitance (Ciss) @ Vds: 570pF
•Output Capacitance (Coss) @ Vgs: 57pF

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