Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDMA410NZ MOSFET Power Electronics Single N-Channel POWERTRENCH 1.5 V Specified Package 6-WDFN
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 9.5A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.4W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 6-MicroFET (2x2) | |
Package / Case |
General Description
This Single N−Channel MOSFET has been designed using onsemi’s
advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 1.5 V
on special MicroFET leadframe.
Features
• Max RDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A
• Max RDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 A
• Max RDS(on) = 36 m at VGS = 1.8 V, ID = 4.0 A
• Max RDS(on) = 50 m at VGS = 1.5 V, ID = 2.0 A
• HBM ESD Protection Level > 2.5 kV (Note 3)
• Low Profile − 0.8 mm Maximum in the New Package MicroFET 2x2 mm
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
• Li−lon Battery Pack
• Baseband Switch
• Load Switch
• DC−DC Conversion
