Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDMA6676PZ MOSFET Power Electronics Single P-Channel POWERTRENCH -30 V -11 A 13.5 m Package 6-PowerWDFN
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 13.5mOhm @ 11A, 10V | |
Vgs(th) (Max) @ Id | 2.6V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.4W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 6-MicroFET (2x2) | |
Package / Case |
Description
This device is an ultra low resistance P−Channel FET. It is
designed for power line load switching applications and reverse
polarity protection. It is especially optimized for voltage rails
that can climb as high as 25 V. Typical end systems include laptop
computers, tablets and mobile phone. Applications include battery
protection, input
power line protection and charge path protection, including USB and
other charge paths. The FDMA6676PZ has an enhanced VGS rating of 25
V specifically designed to simplify installation. When used as
reverse polarity protection, with gate tied to ground and drain
tied to V input, it is designed to support operating input voltages
that
can raise as high as 25 V without the need for external Zener
protection on the gate. Its small 2 x 2 x 0.8 form factor make it
an ideal part for mobile and space constrained applications.
Features
• Max rDS(on) = 13.5 m @ VGS = −10 V
• 25 V VGS Extended Operating Rating
• 30 V VDS Blocking
• 2 x 2 mm Form Factor
• Low Profile − 0.8 mm Maximum
• Integrated Protection Diode
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
