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Results forsaw quartz wafers substratesfrom 1838 Products.
12inch dia300mm Borosilicate33 bf33 Glass Wafers Glass Substrate with high refractive index 8inch 1.0thickness dia100mm 0001 sapphire wafer 1sp or 2s Product description BF33 ...
Shanghai, china
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Quartz Wafer BBAR Coated High-Transmittance Optical Quartz Glass Window Glass Coating Substrate Quartz Glass Tube&Rod Sizes Outer Diameter (OD): 3-100mm Wall Thickness(WT): 1-5mm ...
Anhui, china
Member
10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview We provide high-quality GaN substrates which are ...
Shanghai, china
Verified
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, 4h-semi 4h-N customized square shape sic wafers ...
Shanghai, china
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High Permeability Deep Ultraviolet Sterilization UVC Quartz Glass Substrate LED Application Quartz Wafer Quartz Glass Tube&Rod Sizes Outer Diameter (OD): 3-100mm Wall Thickness(WT)...
Anhui, china
Member
5 x 10mm2 Free-standing GaN Substrates 350 ±25 µm From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate ...
Shanghai, china
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A-axis sapphire wafer for epi-ready test,sapphire optical chips, 2inch A-axis sapphire epi-ready,2inch sapphire substrates for led Sapphire Indtroduce Product Name: Aluminum oxide ...
Shanghai, china
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Quartz Wafer BBAR Coated High-Transmittance Optical Quartz Glass Window Glass Coating Substrate Quartz Glass Tube&Rod Sizes Outer Diameter (OD): 3-100mm Wall Thickness(WT): 1-5mm ...
Anhui, china
Verified
6inch 4H-SiC substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC boules (crystals) are grown, ...
Shanghai, china
Verified
High Permeability Deep Ultraviolet Sterilization UVC Quartz Glass Substrate LED Application Quartz Wafer Quartz Glass Tube&Rod Sizes Outer Diameter (OD): 3-100mm Wall Thickness(WT)...
Anhui, china
Verified
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
Shanghai, china
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2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
Shanghai, china
Verified
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) ...
Shanghai, china
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Growth Method CZ Silicon Wafer Orientation <1-0-0>,<1-1-1>,<1-1-0> 2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview Silicon ...
Shanghai, china
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2inch Blue-LED GaN on silicon wafer There are three main substrates that are used with GaN - Silicon Carbide (SiC), Silicon (Si) and Diamond. GaN on SiC is the most common of the ...
Shanghai, china
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(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
Shanghai, china
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Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
Shanghai, china
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms ...
Shanghai, china
Verified
5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate ...
Shanghai, china
Verified
2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
Shanghai, china
Verified
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