Home Products Minerals & Metallurgy Other Non-Metallic Minerals & Products

saw quartz wafers substrates

Refine Search
Results forsaw quartz wafers substratesfrom 1920 Products.
Surface Acoustic Wave Propagation On Piezoelectric Crystal LT LN Wafers Surface Acoustic Wave Propagation On Piezoelectric LT LN Crystal Wafers Crystro can customize Surface ...
china
Verified
ZrO2 ( zirconia ) ceramic substrate We provides ZrO2 ( zirconia ) ceramic substrate . ZrO2 substrate is one of the most popular ceramic substrate which has excellent heat ...
Henan, china
Member
2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness About synthetic sapphire crystal Sapphire ...
Shanghai, china
Verified
Customized Square Shape Borofloat 33 Glass Substrate with a wide range of uses BOROFLOAT33 is a high quality borofloat glass with excellent properties and a wide range of uses. It ...
Shanghai, china
Verified
5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device Overview Since the 1990s, it has been used commonly in light ...
Shanghai, china
Verified
Customized Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Crystro can customize Surface Acoustic Piezoelectric Wafers including : Lithium Niobate,Lithium Tantalate,Quartz ...
china
Verified
ZrO2 ( zirconia ) ceramic substrate We provides ZrO2 ( zirconia ) ceramic substrate . ZrO2 substrate is one of the most popular ceramic substrate which has excellent heat ...
Henan, china
Verified
2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness About synthetic sapphire crystal Sapphire ...
Shanghai, china
Verified
Sapphire Al2O3 Crystal Substrate Ultrathin 2'' 3'' 4'' Double Side Polished For Optical Use​ Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, ...
Shanghai, china
Verified
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two...
Shanghai, china
Verified
8inch/6inch/5inch/ 2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness About synthetic sapphire ...
Shanghai, china
Verified
5 Inch Dia 125mm Sapphire Substrate 9.0 High Hardness 99.999% Al2O3 Material Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and ...
Shanghai, china
Verified
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be ...
Shanghai, china
Verified
3inch/4inch/2inch 4H-N/semi transparent SiC crystal ingot for optical widows lens after polished About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum...
Shanghai, china
Verified
3 Inch Dia 76.2mm Sapphire Substrate Optical Crystal Windows Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. ...
Shanghai, china
Verified
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high...
Shanghai, china
Verified
10*10*0.1mmt 100um 2inch sapphire wafers double side polished What is Sapphire orientation Zero Degree: The direction of view is parallel to the optical axis of the crystal 90 ...
Shanghai, china
Verified
JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤0.3/cm2 Resistivity≥1E9Ω·cm for power and microwave devices Overview SiC has higher thermal conductivity than GaAs ...
Shanghai, china
Verified
2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate Properties of GaN Chemical properties of GaN 1) At room temperature, GaN is insoluble in water, acid and ...
Shanghai, china
Verified
4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview High Temperature Devices Because SiC has a ...
Shanghai, china
Verified
Page 46 of 50 |< << 40 41 42 43 44 45 46 47 48 49 50 >> >|