Results forsaw quartz wafers substratesfrom 1920 Products.
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Customized La3Ga5SiO14 Langasite Wafers For High And Low Temperature Variable Laser Langasite crystal possesses some great properties, such as higher electromechanical coupling ...
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Automatic Bridge Cutting Machine for Marble Sintered Stone and Quartz Product Description This machine is controlled by microcomputer. Its worktable can be 90°/360° rotating. ...
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Product feature: 1. Good sharpness and long life, low noise and eco-friendly. 2. Stable quality control for excellent cutting performance, high cost-effective. 3. Suitable for ...
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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, Application areas 1 high frequency and high power ...
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Good Thermal Stability Optical Substrate Single Crystal LaO LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial ...
china
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview The features are high crystalline, good uniformity, ...
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Product Description: Fused Silica Wafer is a high-performance, cost-effective IC Silicon Wafer product that is widely used in the semiconductor, MEMS and medical industries. It is ...
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15kw 5100kg PLC Bridge Stone Cutting Machine for Marble Quartz Sintered Stone Product Description This machine is controlled by microcomputer. Its worktable can be 90°/360° ...
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2’’ InSb-Te EPI Substrates Narrow Band Gap Semiconductor Substrates Hall Components Description of InSb-Te: Indium antimonide (InSb), as a kind of group ⅲ-V binary compound ...
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Alumina Thin Flim LaAlO3 Substrates Lanthanum aluminate is an inorganic compound with the formula LaAlO3, often abbreviated as LAO. It is an optically transparent ceramic oxide ...
china
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4H-N/SI<0001>260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices ...
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AT-Cut Quartz End Cap for Accurate Pressure Measurements in Environmental Monitoring The Piezoelectric Quartz End Cap - an innovative solution for precision sensing and actuation ...
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Square <100> LaAlO3 Optical Substrates Lanthanum Aluminate Laalo3 Target LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for ...
china
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2-Inch SiC Substrate 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm No Secondary Flat JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave ...
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Customized LGS Crystal Langasite Wafers For SAW Device BAW Device Electro-Optical Q-Switch LGS Crystal is a multifunctional crystal. The interaction between the electro-optical ...
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Lanthanum Aluminum Oxide Substrate (LaAlO3) LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high ...
china
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon ...
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4'' 0.5mm Thickness LiTaO3 Wafer for High Frequency Broadband Filter and Piezoelectric Transducer The electromechanical coupling coefficient of LiTaO3 crystals is large, and the ...
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High Temperature Superconducting Single Crystal Substrate Laalo3 LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for ...
china
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A-plane±0.2o Patterned Sapphire Substrates BOW ≤-8~0μm Edge Round The formation of LEDs on patterned sapphire substrates is the most cost-effective method for manufacturing such ...
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