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practical low vgs mosfet

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MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver General Description The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS ...
Guangdong, china
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Product: SI3462-E01-GM Description: High-efficiency, synchronous, buck-boost DC/DC converter Input Voltage: 4.75V to 60V Output Voltage: 0.6V to 60V Output Current: Up to 10A ...
china
Verified
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china
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steel elbow beveling machine with two heads,high speed and quality Model 33-114 Spindle power 3.8KW Spindle speed 450/750 Servo torque 10N/M With 8 speed ratio reducer Screw stroke ...
Hebei, china
Verified
PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current ...
Guangdong, china
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Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF ...
Guangdong, china
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Product Name: IR2520DSTRPBF Semiconductor IC Chip Product Category: Semiconductor IC Chips Package Type: SMD (Surface Mount Device) Mounting Style: Through Hole Supply Voltage: 4.5 ...
china
Verified
PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current ...
Guangdong, china
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INA128PA Precision, Low Power INSTRUMENTATION AMPLIFIERS printed circuit board FEATURES ● LOW OFFSET VOLTAGE: 50µV max ● LOW DRIFT: 0.5µV/°C max ● LOW INPUT BIAS CURRENT: 5nA max ● ...
Guangdong, china
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Product Listing: VN5R003HTR-E Power Management ICs Description: The VN5R003HTR-E Power Management ICs from Vishay are designed for a wide range of applications, including ...
china
Verified
IR Sensor Module for Remote Control Systems FEATURES • Photo detector and preamplifier in one package • AC coupled response from 20 kHz to 60 kHz, all data formats • Improved ...
Guangdong, china
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Dual 3A-Peak Low-Side MOSFET Driver Features • Reliable, low-power bipolar/CMOS/DMOS construction • Latch-up protected to >500mA reverse current • Logic input withstands swing to ...
Guangdong, china
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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A ...
Guangdong, china
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STOCK LIST 2SD1408Y 3000 TOSHIBA 16+ TO-220F 10TPB47M 9000 SANYO 16+ SMD F931A106MAA 1950 NICHILON 14+ SMD AM26LS32ACNSR 1600 TI 13+ SOP-16 10TPC68M 9000 SANYO 15+ SMD 10TPB33M ...
Guangdong, china
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low ...
Guangdong, china
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CNY74-2/CNY74-4 Multichannel Optocoupler with Phototransistor Output Description The CNY74-2 and CNY74-4 consist of a phototransistor optically coupled to a gallium arsenide ...
Guangdong, china
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1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • ...
Guangdong, china
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SOT-23 Plastic-Encapsulate Transistors FEATURES ► Complementary to S9013 ► Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted ℃ ) Symbol Parameter ...
Guangdong, china
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Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION · ·With TO-126 package ·High current ·Complement to type BD135/137/139 APPLICATIONS ·Driver stages in high-fidelity ...
Guangdong, china
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PNP GENERAL PURPOSE TRANSISTORS FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : ...
Guangdong, china
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