Home Companies Anterwell Technology Ltd.

S9012 TO-92 Plastic-Encapsulate Transistors low power mosfet high voltage power mosfet

Active Member

Contact Us

[China]

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

FEATURES
► Complementary to S9013
► Excellent hFE linearity

MARKING: 2T1

MAXIMUM RATINGS (TA=25 unless otherwise noted ℃ )

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-25	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current -Continuous	-500	mA
PC	Collector Power Dissipation	300	mW
Tj	Junction Temperature	150	℃

Typical Characteristics

STOCK LIST

50ppm/°C Max, 50µA in SOT23-3 CMOS VOLTAGE REFERENCE FEATURES ● MicroSIZE PACKAGE: SOT23-3 ● LOW ...

IR4427STRPBF DUAL LOW SIDE DRIVER Features · Gate drive supply range from 6 to 20V · CMOS Schmitt...

IR21141SSPBF HALF-BRIDGE GATE DRIVER IC Features • Floating channel up to 600 V or 1200 V • Soft ...

RC4558 DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIER FEATURES • Continuous Short-Circuit Protection • ...

E-Series RF 1:1 Flux Coupled Transformer 0.3 - 200 MHz Features • Surface Mount • 1:1 Impedance ...

2 × 6 W stereo power amplifier TDA1517; TDA1517P FEATURES • Requires very few external components • ...

Related Products