Results forpower sat receiverfrom 15516 Products.
|
|
2SC6144SG Power Mosfet Transistor Electronics Components Chip IC Electronics Low Frequency Power Amplifier Applications • Relay drivers, lamp drivers, motor drivers Features • ...
|
|
|
|
|
FGH60N60SMD 600V 60A Field Stop IGBT Power Transistor Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High ...
|
|
|
|
|
GJS1000H1F-E Mini Optical Receiver , Indoor FTTH Optical Receiver Easy Install GJS1000H1F-E is new design indoor optical receiver for HTTH. It looks similar to dual splitter and ...
|
|
|
|
|
Sysolution Receiving card D70-A8S Product Introduction: D70-A8S is a mini-size receiving card launched by Xixun Technology.uses 120 Pin high-precision interfaces, and supports 32 ...
|
|
|
|
|
FGH40N60SMDF 600V, 40A Field Stop IGBT Features • Maximum Junction Temperature : TJ =175℃ • Positive Temperaure Co-efficient for easy parallel operating • High current capability • ...
|
|
|
|
|
FGH60N60SMD 600V 60A Field Stop IGBT Power Transistor Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High ...
|
|
|
|
|
Dual Input CATV Optical Receiver GJS1000H1F-D2 GJS1000H1F-D2 optical receiver has 2-way independent optical signal receiving port, one is main way , the other is backup. The AGC ...
|
|
|
|
|
2SA1761 Power Mosfet Transistor Electronics Components Chip IC Electronics • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching...
|
|
|
|
|
Modularization Design CATV Optical Receiver Optical Workstation GWS1000H4J/F-G+(CMC) GWS1000H4J/F-G+(CMC) is an ideal solution for two-way HFC networks. The most noticeable feature ...
|
|
|
|
|
2SD2241 Power Mosfet Transistor Electronics Components Chip IC Electronics Switching Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 ...
|
|
|
|
|
FGL40N120AND 1200V NPT IGBT Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ....
|
|
|
|
|
RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C) Built ...
|
|
|
|
|
STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier Features ■ 17 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate ...
|
|
|
|
|
STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT General Features TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 V 30 A ■ OFF LOSSES INCLUDE ...
|
|
|
|
|
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications • High DC current gain: hFE = 100~320 • Low ...
|
|
|
|
|
FIBER OPTIC RECEIVING MODULE TORX173 FIBER OPTIC RECEIVING MODULE FOR DIGITAL AUDIO EQUIPMENT Conform to JEITA Standard CP−1201 (For Digital Audio Interfaces including Fiber Optic ...
|
|
|
|
|
FIBER OPTIC RECEIVING MODULE TORX178B FIBER OPTIC RECEIVING MODULE FOR DIGITAL AUDIO INTERFACE Conforms to JEITA Standard CP−1201 (For Digital Audio Interface including Fiber Optic ...
|
|
|
|
|
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • ...
|
|
|
|
|
BD244B, BD244C* (PNP) Complementary Silicon Plastic Power Transistors Features •Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc •Collector Emitter ...
|
|
|
|
|
2SA2222SG Power Mosfet Transistor Electronics Components Chip IC Electronics Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT process • Large ...
|
|
|
