Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25 Ω

Attention

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