AP7H03DF 7A 30V DFN33 N Channel Mos Field Effect Transistor High Frequency

AP7H03DF 7A 30V DFN33 N Channel Mos Field Effect Transistor High Frequency

N Channel Mos Field Effect Transistor Description:

The AP7H03DF is the highest performance trench
N-ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the small power switching and
load switch applications. The meet the RoHS and
Product requirement with full function reliability approved.

N Channel Mos Field Effect Transistor Features

VDS = 30V ID = 7A
RDS(ON) < 18mΩ @ VGS=4.5V
RDS(ON) < 30mΩ @ VGS=2.5V

Details

Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names.

Package Marking and Ordering Information

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Note :

1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is V DD =25V,VGS=10V,L=0.1mH,IAS=21A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

Attention

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