Results foripg20n06s4l14aatma1 power transistorfrom 12375 Products.
|
|
N-Channel NVH4L160N120SC1 SiC Power Single MOSFET Transistors TO-247-4 1200V Product Description Of NVH4L160N120SC1 NVH4L160N120SC1 is 1200V, 224mOhm, 17.3A SiC Power Single N...
china
|
|
|
|
|
Single N-Channel Transistors NTMFS005N10MCLT1G Power MOSFET 5-DFN IC Chips Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET – Power, Single ...
china
|
|
|
|
|
N-Channel SCT3040KW7TL SiC Power MOSFET Transistors TO-263-8 Integrated Circuit Chip Product Description Of SCT3040KW7TL SCT3040KW7TL is 1200V 56A(Tc) 267W N-channel SiC power ...
china
|
|
|
|
|
Integrated Circuit Chip SCTWA35N65G2V Silicon carbide Power MOSFET Transistors Product Description Of SCTWA35N65G2V SCTWA35N65G2V is Silicon carbide Power MOSFET 650 V, 55 mOhm 45 ...
china
|
|
|
|
|
N-Channel NTH4L040N120SC1 Silicon Carbide Power MOSFET Transistors TO-247-4L Product Description Of NTH4L040N120SC1 NTH4L040N120SC1 is 1200V 58A(Tc) 319W (Tc) N-Channel Silicon ...
china
|
|
|
|
|
SCTW90N65G2V N-Channel 650V 90A 390W Silicon carbide Power MOSFET Transistors Product Description Of SCTW90N65G2V SCTW90N65G2V is Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ ...
china
|
|
|
|
|
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers ...
|
|
|
|
|
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high...
|
|
|
|
|
IRF7343TRPBF MOSFET Power Electronics High Performance Low On Resistance Low Voltage Drive Description: The IRF7343TRPBF is a N-Channel Power MOSFET developed by International ...
china
|
|
|
|
|
IRF8313TRPBF MOSFET Power Electronics High Performance Low-Power Solution Product Parameters: Drain-Source Voltage: 30V Continuous Drain Current: 30A Drain-Source On-Resistance: 0...
china
|
|
|
|
|
IRFR420ATRLPBF MOSFET Power Electronics High-Performance Low-Voltage Solution for Your Power Needs Product Specifications: 1. Drain-Source Voltage (VDS): 100V 2. Gate-Source ...
china
|
|
|
|
|
AO3420, N-Channel Enhancement Mode Field Effect Transistor Features: - 30V Drain-Source Breakdown Voltage (VDSS) - 150mA Continuous Drain Current (ID) at 25°C - 8.8A Drain-Source ...
china
|
|
|
|
|
Product Name: IRLR8726TRLPBF MOSFET Power Electronics Product Description: The IRLR8726TRLPBF MOSFET Power Electronics device is a high-speed, low-on-resistance voltage-controlled ...
china
|
|
|
|
|
IRF9640SPBF MOSFET Power Electronics High Power High Performance Solution The IRF9640SPBF MOSFET transistor is a N-Channel, 100V, 0.045ohm, 14A device with a maximum power ...
china
|
|
|
|
|
NTMFS4C028NT1G MOSFET Power Electronics Product Description: The NTMFS4C028NT1G is a power MOSFET transistor that is designed for use in power electronics and converters. This ...
china
|
|
|
|
|
Product Listing: FDD18N20LZ MOSFET Power Electronics This MOSFET Power Electronics component is a powerful, high-performance device designed to achieve a wide range of applications ...
china
|
|
|
|
|
NTD24N06LT4G MOSFET Power Electronics Product Description: The NTD24N06LT4G is a low-side MOSFET power electronics device designed to switch power in a wide range of applications. ...
china
|
|
|
|
|
FDS4465 MOSFET Power Electronics The FDS4465 MOSFET is an advanced power electronics solution designed for a wide range of applications. This MOSFET features a wide range of ...
china
|
|
|
|
|
FDMC8327L MOSFET Power Electronics Product Description: The FDMC8327L is a high-power MOSFET power electronics device from Fairchild Semiconductor. It offers a low on-resistance of ...
china
|
|
|
|
|
Product Listing: FQD3P50TM MOSFET Power Electronics Product Description: FQD3P50TM is a high-performance MOSFET power electronics device that provides excellent power handling ...
china
|
|
|
