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[China]
Trade Verify
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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Verified Suppliers
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NTMFS4C028NT1G MOSFET Power Electronics
Product Description:
The NTMFS4C028NT1G is a power MOSFET transistor that is designed for use in power electronics and converters. This device is built with the latest MOSFET technology and offers high performance and low on-state resistance for superior power efficiency. It also features a low gate-to-source voltage threshold and excellent avalanche ruggedness for robust operation.
Features:
• Low On-State Resistance (RDS(on))
• High Avalanche Ruggedness
• Low Gate-to-Source Voltage Threshold
• High Performance MOSFET Technology
• Wide Operating Temperature Range
Specifications:
• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 4A
• On-State Resistance (RDS(on)): 0.0080 Ω
• Gate-to-Source Voltage (VGS): -20V to +20V
• Maximum Power Dissipation (PD): 1.6W
• Operating Temperature Range: -55°C to +175°C
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 4.73mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 22.2 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1252 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.51W (Ta), 25.5W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case | ||
Base Product Number |
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