Home Products Electronic Components & Supplies Electronic Accessories & Supplies

ipg20n06s4l14aatma1 power transistor

Refine Search
Results foripg20n06s4l14aatma1 power transistorfrom 12375 Products.
GaN IC IGLR60R340D1XUMA1 600V CoolGaN Enhancement Mode Power Transistor Product Description Of IGLR60R340D1XUMA1 IGLR60R340D1XUMA1 is 600V CoolGaN Enhancement Mode Power Transistor...
china
Verified
800V CoolMOSª P7 Power Transistor IPA80R1K4P7 MOS tube Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th ...
Guangdong, china
Verified
Product Range Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for ...
china
Member
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed ...
HongKong, china
Verified
Black Insulated Gate Bipolar Transistor Normal Temperature Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated ...
china
Verified
MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE  Low Leakage  High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL ...
china
Verified
IRFM250 Power MOSFET POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N...
Guangdong, china
Verified
BTB16-800CWRG Microelectronic Powerful and Efficient BTB16-800CWRG Microelectronic for Your Electronic Projects Looking for a powerful and efficient microelectronic component that ...
china
Verified
IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a ...
china
Verified
N-Channel BSC100N06LS3GATMA1 Power Transistor 8-PowerTDFN Integrated Circuit Chip​ Product Description Of BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 is 60V OptiMOS 3 Power-Transistor ...
china
Verified
IPD70R1K4P7S Series 700V CoolMOS P7 Power Transistor Field Effect MOS Tube Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Excellent thermal ...
Guangdong, china
Verified
IRG7PH42UDPBF IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current ...
china
Member
MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE  Low Leakage  High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL ...
china
Verified
Single N-Channel NVHL040N120SC1 SiC Power Transistors 1200V Integrated Circuit Chip​ Product Description Of NVHL040N120SC1 NVHL040N120SC1 is 1200V, 40m, 60A MOSFET - Single N...
china
Verified
IPD70R1K4CE, IPS70R1K4CE FET 700V CoolMOS CE Power Transistor MOS tube Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • ...
Guangdong, china
Verified
APT35GP120BG IGBT Power Module Transistors IGBTs Single APT35GP120BG Specifications Part Status Active IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - ...
china
Member
GaN IC IGLR60R190D1XUMA1 N-Channel 600V Enhancement Mode Power Transistor Product Description Of IGLR60R190D1XUMA1 IGLR60R190D1XUMA1 is N-Channel 600V Enhancement Mode Power ...
china
Verified
GaN IC IGLD60R190D1AUMA1 N-Channel CoolGaN Power Transistor 8-LDFN Surface Mount Product Description Of IGLD60R190D1AUMA1 IGLD60R190D1AUMA1 is N-Channel CoolGaN power transistor...
china
Verified
SiC Trench Power Transistors IMZA65R027M1H TO-247-4 Integrated Circuit Chip​ Product Description Of IMZA65R027M1H IMW65R030M1H is 650V CoolSiC M1 SiC Trench Power Device, it is ...
china
Verified
Page 5 of 50 |< << 1 2 3 4 5 6 7 8 9 >> >|