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[China]
Trade Verify
Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
Contact name:Sales Manager
ShenZhen Mingjiada Electronics Co.,Ltd. |
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Verified Suppliers
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TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power
Product Description Of IMBG65R048M1H
IMBG65R048M1H is 650V CoolSiC M1 SiC Trench Power Device, Surface Mount.
Specification Of IMBG65R048M1H
| Part Number | IMBG65R048M1H |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
Features Of IMBG65R048M1H
Other Electronic Components In Stock
| Part Number | Package |
| RT8567AGQW | WQFN20 |
| IRG4PSH71UPBF | SUPER-247 |
| PIC18F66J11-I/PT | TQFP64 |
| MX29GL256EHT2I-90Q | TSOP56 |
| ITG-3600 | QFN16 |
| AXK7L24223G | SMD |
FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our
purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample
free?
A: Yes,we support sample order and small order.Sample cost is
different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also
use your suggested forwarder.Products will be in good packing and
ensure the safety and we are responsible to product damage to your
order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without
stock,we will confirm lead time for you based on your order
quantity.
