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TK35N65W High Power Transistor 35A 650V Switching Voltage 270W 115nC 80 MOhms Power Supply Applications Switching Voltage Regulators DTMOSIV Series MOSFETs Toshiba DTMOSIV MOSFETs ...
Guangdong, china
Verified
High Efficiency, Low Distortion 1.8-2.2GHz Gain 35dB Transmitter RF Power Amplifier for Wireless Networking Description The RF (Radio Frequency) Power Amplifier is an electronic ...
china
Verified
VISHAY IC S525T-GS08 Surface Mount SOT-223 S525T Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - ...
china
Verified
IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a ...
china
Verified
RIG resistor 1000w 200ohm RF power type fixed resistor product name: RF radio frequency resistor/High power resistor/Micro -band resistor/High -frequency resistor/RIG resistor...
Sichuan, china
Verified
IoT Chip CC3220MODSM2MOBR 59mA Wireless MCU Modules RF Microcontrollers Product Description Of CC3220MODSM2MOBR CC3220MODSM2MOBR's subsystem enables low-power consumption modes for ...
china
Verified
MRF173 N-Channel Enhancement Mode MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain ...
Guangdong, china
Member
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
china
Verified
Cansec TA3220SSA-F Ti CC3220 190M Long Range Wifi Module High Flash Capacity Rf Combi Wifi Wireless Receiver Module Cansec TA3220SSA-F Ti CC3220 190M Long Range Wifi Module High ...
Beijing, china
Verified
Product Description: Infrared Drying Machine The Infrared Drying Machine is an advanced heating device that utilizes infrared heat to aid in the drying of various materials. It ...
Guangdong, china
Verified
IKW15N120T2 IGBT Transistors LOW LOSS DuoPack 1200V 15A Hard Switching Anti Parallel Diode Description 1200 V, 15 A IGBT discrete with anti-parallel diode in TO-247 package Hard...
Guangdong, china
Verified
6 - 11 GHz High Power Amplifier Psat 49.5 dBm High Voltage RF Power Amplifier for microwave links Description This high-voltage RF power amplifier operates in the frequency range ...
china
Verified
MRF173 N-Channel Enhancement Mode MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain ...
Guangdong, china
Member
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
china
Verified
BSC109N10NS3G npn power transistors 109N10NS n-channel mosfet 100V 63A TDSON-8 OptiMOS Features · Very low gate charge for high frequency applications ·Optimized for dc-dc ...
Guangdong, china
Verified
Wide Band Low Noise Amplifier 0.1-20 GHz P1dB 13 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device ...
china
Verified
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a ...
Guangdong, china
Member
FGA25N120ANTD Power Switching IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and ...
Guangdong, china
Verified
Customized S Band Solid State Amplifier 2300-2500MHz RF Power Amplifier for Military Communication Description The 2300MHz-2550MHz AMPS (35W) S-band RF Power Amplifier is ...
china
Verified
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a ...
Guangdong, china
Member
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