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infrared modulator rf power transistors

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Rogers 4350 Material High Frequency RF Power Amplifier HF PCB General information: Name Power amplifier pcb Solder mask purple Material Rogers 4350 Silkscreen white Layer 4 Core 1 ...
china
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TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ...
china
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High-Performance Power Transistor IRF540NPBF Description: Superior Design for Advanced Electronics If you're looking for an advanced power transistor for your electronics projects, ...
china
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0.05 - 1.5 GHz Wideband Low Noise Amplifier Module P1dB 15 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest ...
china
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STGW80V60DF STGW30NC60KD STGP19NC60KD STGF15M65DF2 Insulated Gate Bipolar Transistor Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor ...
Guangdong, china
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RF power type fixed resistor 1000w 50ohm RF Resistor Microwave radio frequency resistor product name: Electronic component passive component RF resistor 50 ohm 100 ohm 1000W flange ...
Sichuan, china
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CC1101RGPR IC RF TXRX ISM Product Details Description: The CC1101RGPR TI RF/IF and RFID RF Transceiver ICs are designed for use in a variety of applications, including wireless ...
china
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32W Telecom RF Power Amplifier Module 925MHz 960MHz UMTS CH 8, LTE 8,900 GSM Downlink Product Description: The RF Power Amplifier offers high performance in the wireless power ...
china
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RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that ...
Guangdong, china
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Small Size Embedded MCU CC2640R2F Chip Bluetooth Module Support BLE4.2/5.0 RF-BM-4044B2 is a Bluetooth Low Energy data module built on basis of the TI CC2640R2F, which is embedded ...
Guangdong, china
Verified
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if ...
china
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Mosfet Power Transistor IRFP90N20DPBF 200V 94A 23mOhm 180nCAC MOSFET Transistor Applications • High frequency DC-DC converters • Lead-Free Description The IR MOSFET family of power ...
Guangdong, china
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32W Telecom RF Power Amplifier Module 2110MHz 2170MHz UMTS CH 1,CH 10,LTE 1,LTE 10,LTE 65,LTE 66,2100+ Downlink Product Description: The RF Power Amplifier offers high performance ...
china
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RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that ...
Guangdong, china
Member
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ...
china
Verified
FGH40N60SFD Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs ...
Guangdong, china
Verified
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if ...
china
Verified
FGH60N60SFDTU Insulated Gate Bipolar Transistor 600V 60A 378W IGBT Transistors Applications • Solar Inverter, UPS, Welder, PFC Specifications Product Attribute Attribute Value ...
Guangdong, china
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TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value ...
china
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TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value ...
china
Verified
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