NCV8560MN330R2G onsemi

Here is the English information on the NCV8560MN330R2G chip:

• Breakdown Voltage: 30V
• On-Resistance: 3.3 mΩ (typ)
• Continuous Drain Current: 6A
• Fast Switching Speeds
• DFN SON 6 (3x3) Package

The NCV8560MN330R2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 6A
• Very low on-resistance minimizes conduction losses
• Fast switching improves efficiency at high operating frequencies
• Ultra-small DFN SON package saves board space

Common Applications:

• Point-of-load DC/DC converters below 6A load
• Battery chargers/protection circuits for loads under 6A
• Portable/mobile electronic power supplies

Benefits include the ability to switch 6A efficiently in an extremely compact package. It is well-suited for integration into space-constrained power designs.

In summary, the NCV8560MN330R2G combines 6A current handling with ultra-low resistance in an minimized footprint MOSFET package.