NCV33375ST1.8T3G onsemi

Here is the English information on the NCV33375ST1.8T3G chip:

• Breakdown Voltage: 20V
• On-Resistance: 1.8 mΩ (typ)
• Continuous Drain Current: 3.375A
• Fast Switching Speeds
• TO-220 WASHER Package

The NCV33375ST1.8T3G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 3.375A
• Extremely low on-resistance minimizes conduction losses
• Fast switching improves conversion efficiency at high frequencies
• TO-220 package provides excellent heat dissipation for the load current

Common Applications:

• Low power DC/DC converters and voltage regulators
• Battery chargers and protection circuits below 3.375A loads
• Automotive power supplies

Benefits include the ability to switch up to 3.375A with very low resistance and losses. The thermal robust package supports reliable operation under continuous medium current loads.

Well-suited for applications where minimizing losses at medium currents is important.

In summary, the NCV33375ST1.8T3G combines extremely low resistance with 3.375A switching capability in a package optimized for thermal performance.