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NCP51100ASNT1G onsemi

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NCP51100ASNT1G onsemi

Country/Region china
City & Province shenzhen
Categories Electrical Product Agents
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Product Details

Here is the English description of the NCP51100ASNT1G chip:

  • Breakdown Voltage: 30V
  • On-Resistance: N/A (typ)
  • Continuous Drain Current: 1A
  • Fast Switching Speeds
  • SOT-23 (DBV) Package

The NCP51100ASNT1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 1A
  • Low RDS(on) enables high conduction with minimal losses
  • Fast switching improves efficiency at high frequencies
  • Ultra-small SOT-23 package saves precious board space

Common Applications:

  • Point-of-load DC/DC converters below 1A loads
  • Battery chargers under 1A current
  • Space constrained power supplies

Benefits include the ability to precisely switch up to 1A in a minimized footprint.

Well-suited for compact designs where board space is limited.

In summary, the NCP51100ASNT1G combines 1A switching capability with an extremely small package size. The focus is on minimized solutions.

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