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NCP6131S52MNR2G onsemi

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NCP6131S52MNR2G onsemi

Country/Region china
City & Province shenzhen
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Product Details

Here is the English description of the NCP6131S52MNR2G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 6.13A
  • On-Resistance: 52 mΩ (typ)
  • Fast Switching Speeds
  • PowerMini SO-8 Package

The NCP6131S52MNR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 6.13A
  • Low RDS(on) of 52 mΩ minimizes conduction losses
  • Fast switching for high efficiency
  • PowerMini SO-8 package saves board space

Common Applications:

  • Point-of-load DC/DC converters under 6.13A load
  • Motor drivers requiring compact design
  • Where minimising size is important

Benefits include reliable 6.13A performance with low losses in a small PowerMini package.

Well suited for space constrained applications that require switching up to 6.13A.

In summary, the NCP6131S52MNR2G delivers 6.13A switching capability with ultra-low resistance in a compact PowerMini package.

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