Active Member
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Address: 苏州吴中区苏蠡路
Contact name:Tina
Homray Material Technology |
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4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier
Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer ,silicon carbide waferis more suitable for high temperature and high power device.Silicon carbide wafercan be supplied in diameter 4inch,6inch , both 4H-N and 4H-SI. Please contact HMT for more detailed spec.
